Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Nature Communications

Volumn 5, Issue , 2014, Pages

  Mailoa, Jonathan P ^a   Akey, Austin J ^a   Simmons, Christie B ^a   Hutchinson, David ^b   Mathews, Jay ^c   Sullivan, Joseph T ^a   Recht, Daniel ^d   Winkler, Mark T ^a,f   Williams, James S ^e   Warrender, Jeffrey M ^c   Persans, Peter D ^b   Aziz, Michael J ^d   Buonassisi, Tonio ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c Benet Laboratories   (United States)

^d HARVARD UNIVERSITY   (United States)

^e AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^f IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; SILICON;

CONCENTRATION (COMPOSITION); ELECTRONIC EQUIPMENT; LOW TEMPERATURE; SILICON; TELECOMMUNICATION; TEMPERATURE EFFECT;

ARTICLE; CHEMICAL PHENOMENA; CHEMICAL PROCEDURES; DIODE; DIODE LASER; ENERGY CONVERSION; HYPERDOPING; MASS SPECTROMETRY; PHOTODIODE; PHYSICAL PHENOMENA; PULSED LASER MELTING; ROOM TEMPERATURE; ROOM TEMPERATURE SUB BAND GAP PHOTORESPONSE; STEADY STATE;

EID: 84891776337     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms4011     Document Type: Article

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