Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Journal of Applied Physics

Volumn 114, Issue 12, 2013, Pages

  Recht, Daniel ^a   Smith, Matthew J ^b   Charnvanichborikarn, Supakit ^c   Sullivan, Joseph T ^b   Winkler, Mark T ^b,e   Mathews, Jay ^d   Warrender, Jeffrey M ^d   Buonassisi, Tonio ^b   Williams, James S ^c   Gradečak, Silvija ^b   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

^b Massachusetts Institute of Technology   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d Benet Laboratories   (United States)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILING; ION IMPLANTATION; MELTING; SEMICONDUCTOR LASERS; SILICON WAFERS; SINGLE CRYSTALS; STRUCTURAL METALS; SUPERSATURATION; SURFACE SEGREGATION; THERMODYNAMIC PROPERTIES; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

CONCENTRATION-DEPTH PROFILE; EQUILIBRIUM PARTITION COEFFICIENTS; INTERMEDIATE BAND SEMICONDUCTOR; IRRADIATION CONDITIONS; LASER MELTING; LOWER BOUNDS; SINGLE-CRYSTAL SI; STRUCTURAL CHARACTERIZATION;

PULSED LASERS;

EID: 84885406201     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4821240     Document Type: Article

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