Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response

Optics Express

Volumn 17, Issue 7, 2009, Pages 5193-5204

  Geis, M W ^a   Spector, S J ^a   Grein, M E ^a   Yoon, J U ^a   Lennon, D M ^a   Lyszczarz, T M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CARRIER MOBILITY; EFFICIENCY; ELECTROMAGNETIC WAVE ABSORPTION; LEAKAGE CURRENTS; LIGHT ABSORPTION; PHOTODETECTORS; PHOTODIODES; PHOTOTRANSISTORS; SILICON; WAVEGUIDES;

DETECTOR TECHNOLOGY; FABRICATION YIELD; HIGH QUANTUM EFFICIENCY; INFRARED PHOTODIODE; INTERNAL QUANTUM EFFICIENCY; LOW-LEAKAGE CURRENT; OPTICAL RESPONSE; SILICON WAVEGUIDE;

QUANTUM EFFICIENCY;

SILICON;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; INFRARED RADIATION; INSTRUMENTATION; MICROWAVE RADIATION; PHOTOMETRY; RADIATION EXPOSURE; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; TRANSDUCER;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFRARED RAYS; MICROWAVES; PHOTOMETRY; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; SILICON; TRANSDUCERS; TRANSISTORS;

EID: 65249104896     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.005193     Document Type: Article

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