Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing

Semiconductor Science and Technology

Volumn 27, Issue 10, 2012, Pages

  Hu, Shaoxu ^a   Han, Peide ^a   Wang, Shuai ^a   Mao, Xue ^a   Li, Xinyi ^a   Gao, Lipeng ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY STATE; LASER FLUENCES; PHOTORESPONSE CHARACTERISTICS; PHOTORESPONSES; PICOSECONDS; RESPONSIVITY; REVERSE BIAS VOLTAGE; ROOM TEMPERATURE; SI PHOTODIODES; SOLID SOLUBILITIES; SPECTRAL RESPONSE;

DIODES; ENERGY GAP; MIXING; PHOTODIODES; PULSED LASERS; SELENIUM; SILICON;

SILICON WAFERS;

EID: 84866320596     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/10/102002     Document Type: Article

References (25)

1. Wu C, Crouch C H, Zhao L, Carey J E, Younkin R, Levinson J A, Mazur E, Farrell R M, Gothoskar and Karger A 2001 Appl. Phys. Lett. 78 1850
2. Crouch C H, Carey J E, Warrender J M, Aziz M J, Mazur E and Genin F Y 2004 Appl. Phys. Lett. 84 1850
3. Crouch C H, Carey J E, Shen M, Mazur E and Genin F Y 2004 Appl. Phys. A 79 1635
4. Zorba V, Boukos N, Zergioti I and Fotakis C 2008 Appl. Opt. 47 1846
5. Sheehy M A, Winston L, Carey J E, Friend C M and Mazur E 2005 Chem. Mater. 17 3582
6. Kim T G, Warrender J M and Aziz M J 2006 Appl. Phys. Lett. 88 241902
7. Bob B P, Kohno A, Charnvanichborikarn S, Warrender J M, Umezu I, Tabbal M, Williams J S and Aziz M J 2010 J. Appl. Phys. 107 123506
8. Pan S H, Recht D, Charnvanichborikarn S, Williams J S and Aziz M J 2011 Appl. Phys. Lett. 98 121913
9. Tabbal M, Kim T, Woolf D N, Shin B and Aziz M J 2010 Appl. Phys. A 98 589
10. Smith M J, Winkler M, Sher M J, Lin Y T, Mazur E and Gradecak S 2011 Appl. Phys. A 105 795
11. Iyengar V V, Nayak B K and Gupta M C 2010 Sol. Energy Mater. Sol. Cells 94 2251
12. Yoo J S, Parm I O, Gangopadhyay U, Kim K, Dhungel S K, Mangalaraj D and Yi J 2006 Sol. Energy Mater. Sol. Cells 90 3085
13. Sher M J, Winkler M T and Mazur E 2011 Mater. Res. Bull. 36 439
14. Carey J E, Crouch C H, Shen M and Mazur E 2005 Opt. Lett. 30 1773
15. Huang Z, Carey J E, Liu M, Guo X, Mazur E and Campbell J C 2006 Appl. Phys. Lett. 89 033506
16. Said A J, Recht D, Sullivan J T, Warrender J M, Buonassisi T, Persans P D and Aziz M J 2011 Appl. Phys. Lett. 99 073503
17. Myers R A, Farrell R, Karger A M, Carey J E and Mazur E 2006 Appl. Opt. 45 8825
18. Taskin A A, Zaitsev B A, Obodnikov V I and Tishkovskii E G 2000 Semiconductors 34 312
19. Reitano R, Smith P M and Aziz M J 1994 J. Appl. Phys. 76 1518
20. Hu S, Han P, Gao L, Mao X, Li X and Fan Y 2012 Chin. Phys. Lett. 29 046101
21. Vydyanath H R, Lorenzo J S and Kroger F A 1978 J. Appl. Phys. 49 5928
22. Schockley W and Read W T 1952 Phys. Rev. 87 835
23. Thomas G A, Capizzi M, Derosa F, Bhatt R N and Rice T M 1981 Phys. Rev. B 23 5472
24. Mao X, Han P, Gao L, Mi Y, Hu S, Fan Y, Zhao C and Wang Q 2011 IEEE Photon. Technol. Lett. 23 1517
25. Monroe D and Kastner M A 1983 Phil. Mag. B 47 605