Analysis of conductivity degradation in gold/platinum-doped silicon

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2269-2275

  Valdinoci, Marina ^a   Colalongo, Luigi ^a   Pellegrini, Aurelio ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CHARGE CARRIERS; CRYSTALS; ELECTRON ENERGY LEVELS; ENERGY GAP; GOLD; IMPURITIES; PLATINUM; SEMICONDUCTING SILICON;

AUGER EFFECT; CONDUCTIVITY DEGRADATION; DEEP IMPURITIES; THERMAL ACTIVATION MEASUREMENT;

SEMICONDUCTOR DOPING;

EID: 0030406223     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544420     Document Type: Article

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