Degradation of boron-doped Czochralski-grown silicon solar cells

Physical Review Letters

Volumn 93, Issue 5, 2004, Pages

  Adey, J ^a   Jones, R ^a   Palmer, D W ^a   Briddon, P R ^b   Oberg S ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b Physics Centre   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLE DEFECTS; BORON-OXYGEN DEFECTS; DIFFUSION BARRIERS; MINORITY CARRIERS;

ACTIVATION ENERGY; BORON; CRYSTAL GROWTH FROM MELT; DEGRADATION; DIMERS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ETCHING; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION;

SOLAR CELLS;

EID: 69349106228     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.055504     Document Type: Article

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