Suppression of light degradation of carrier lifetimes in low-resistivity CZ-Si solar cells

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 277-285

  Saitoh, T ^a   Wang, X ^a   Hashigami, H ^a   Abe, T ^b   Igarashi, T ^b   Glunz, S ^c   Rein, S ^c   Wettling, W ^c   Yamasaki, I ^d   Sawai, H ^d   Ohtuka, H ^e   Warabisako, T ^e  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^d SHARP CORPORATION   (Japan)

^e HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HIGH TEMPERATURE OPERATIONS; OXIDATION; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

HIGH TEMPERATURE OXIDATION; LIGHT DEGRADATION;

SILICON SOLAR CELLS;

EID: 0035194555     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00103-3     Document Type: Article

References (8)

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5. S. W. Glunz, S. Rein, W. Warta, J. Knobloch, W. Wettling, Proceedings of the Second World Conference on Photovoltaic Energy Conversion, 1998, pp. 1343-1346.
6. J. Schmidt, A.G. Aberle, R. Hezel, Proceedings. of 26th IEEE Photovoltaic Specialists Conference, 1997, p. 13.
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8. T. Saitoh, Extended Abstract of the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes, 1999, pp. 81-86.