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Journal of Electronic Materials

Volumn 30, Issue 12, 2001, Pages 1616-1627

Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties

(3) Sopori, Bhushan a Zhang, Yi a,b Ravindra, N M b

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b NEW JERSEY INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Defects; Hydrogen; Impurities; Passivation; Solar cells

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; HYDROGEN; MOS DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SOLAR CELLS;

FORMING GAS ANNEAL; INTERFACIAL STATE PASSIVATION;

SEMICONDUCTING SILICON;

EID: 0035737204 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0181-1 Document Type: Article

Times cited : (61)

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