A comparative study of tunneling FETs based on graphene and GNR heterostructures

IEEE Transactions on Electron Devices

Volumn 61, Issue 1, 2014, Pages 186-192

  Ghobadi, Nayereh ^a   Pourfath, Mahdi ^a,b  

^a UNIVERSITY OF TEHRAN   (Iran)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Graphene; graphene heterostructures; graphene nanoribbon (GNR); nonequilibrium Green's function (NEGF); tunneling transistors

Indexed keywords

FREQUENCY RESPONSE; GRAPHENE; GREEN'S FUNCTION; HETEROJUNCTIONS;

ATOMISTIC SIMULATIONS; COMPARATIVE STUDIES; DENSITY OF STATE; DEVICE CHARACTERISTICS; ELECTRONIC APPLICATION; GRAPHENE NANORIBBON (GNR); NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM CAPACITANCE;

NANORIBBONS;

EID: 84891555908     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2291788     Document Type: Article

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