Vertical field-effect transistor based on wave-function extension

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 8, 2011, Pages

  Sciambi, A ^a,b   Pelliccione, M ^a,b   Lilly, M P ^c   Bank, S R ^d,e   Gossard, A C ^d   Pfeiffer, L N ^f   West, K W ^f   Goldhaber Gordon, D ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d University of California   (United States)

^e The University of Texas at Austin   (United States)

^f Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80052515850     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.085301     Document Type: Article

References (28)

1. Semiconductor Industry Association., The International Technology Roadmap for Semiconductors, 2009 edition. SEMATECH: Austin, TX [http://www.itrs.net/ Links/2005ITRS/ExecSum2005.pdf].
2. V. R. Kolagunta, D. B. Janes, G. L. Chen, K. J. Webb, M. R. Melloch, and C. Youtsey, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118065 69, 374 (1996).
3. J. B. Khurgin and D. Yang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369663 85, 3218 (1998).
4. J. A. Simmons, M. A. Blount, J. S. Moon, S. K. Lyo, W. E. Baca, J. R. Wendt, J. L. Reno, and M. J. Hafich, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368610 84, 5626 (1998).
5. M. A. Kastner, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.64.849 64, 849 (1992).
6. J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.69.3804 69, 3804 (1992).
7. H. C. Manoharan, Y. W. Suen, M. B. Santos, and M. Shayegan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.1813 77, 1813 (1996).
8. M. Heiblum and M. V. Fischetti, IBM J. Res. Dev. IBMJAE 0018-8646 10.1147/rd.344.0530 34, 530 (1990).
9. R. J. Baker, CMOS Circuit Design, Layout, and Simulation, 3rd ed. (Wiley IEEE Press, New York, NY, 2010).
10. Simulations used code by G. L. Snider, Univeristy of Notre Dame, and by C. X. Liu, Tsinghua University.
11. J. Bardeen, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.6.57 6, 57 (1961).
12. R. Clerc, A. Spinelli, G. Ghibaudo, and G. Pananakakis, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1427398 91, 1400 (2002). (Pubitemid 34148808)
13. Heterostructure H1 and H2 were grown by L.N.P. and K.W.W.
14. J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.103882 57, 2324 (1990).
15. M. V. Weckwerth, J. A. Simmons, N. E. Harff, M. E. Sherwin, M. A. Blount, W. E. Baca, and H. C. Chui, Superlattices Microstruct. SUMIEK 0749-6036 10.1006/spmi.1996.0115 20, 561 (1996).
16. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science SCIEAS 0036-8075 10.1126/science.1102896 306, 666 (2004). (Pubitemid 39440910)
17. -2 has been achieved in graphene using electrolytic gates, though this approach would not be viable for practical devices. D. K. Efetov and P. Kim, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.105.256805 105, 256805 (2010).
18. S. Kim, I. Jo, J. Nah, Z. Yao, S. K. Banerjee, E. Tutuc, Phys. Rev. B 1098-0121 10.1103/PhysRevB.83.161401 83, 161401 (R) (2011).
19. M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.98.206805 98, 206805 (2007). (Pubitemid 47139572)
20. X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science SCIEAS 0036-8075 10.1126/science.1150878 319, 1229 (2008). (Pubitemid 351323015)
21. A. K. Geim, Science SCIEAS 0036-8075 10.1126/science.1158877 324, 1530 (2009).
22. L. A. Ponomarenko, R. Yang, R. V. Gorbachev, P. Blake, A. S. Mayorov, K. S. Novoselov, M. I. Katsnelson, and A. K. Geim, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.105.136801 105, 136801 (2010).
23. A. Hazeghi, J. A. Sulpizio, G. Diankov, D. Goldhaber-Gordon, and H. S. Philip Wong, Rev. Sci. Instrum. RSINAK 0034-6748 10.1063/1.3582068 82, 053904 (2011).
24. J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smetr, K. von Klitzing, and A. Yacoby, Nat. Phys. RSINAK 1745-2473 10.1038/nphys781 4, 144 (2008).
25. Y. Zhang, V. W. Brar, C. Girit, A. Zettl, and M. F. Crommie, Nat. Phys. RSINAK 1745-2473 10.1038/nphys1365 5, 722 (2009).
26. E. Rossi and S. Das Sarma, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.101.166803 101, 166803 (2008).
27. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nano. PRLTAO 1748-3387 10.1038/nnano.2010.172 5, 722 (2010).
28. A. Sciambi, M. Pelliccione, S. R. Bank, A. C. Gossard, and D. Goldhaber-Gordon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3492440 97, 132103 (2010).