Device performance of graphene nanoribbon field-effect transistors in the presence of line-edge roughness

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3527-3532

  Yazdanpanah Goharrizi, Arash ^a   Pourfath, Mahdi ^b   Fathipour, Morteza ^a   Kosina, Hans ^b  

^a UNIVERSITY OF TEHRAN   (Iran)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Device simulation; graphene field effect transistors; graphene nanoribbon; nonequilibrium Green's function (NEGF); quantum transport

Indexed keywords

GRAPHENE; GREEN'S FUNCTION; QUANTUM ELECTRONICS;

ATOMISTIC SIMULATIONS; DEVICE PERFORMANCE; DEVICE SIMULATIONS; EDGE BOND RELAXATION; ELECTRICAL CHARACTERISTIC; ELECTRONIC BAND-STRUCTURE; GRAPHENE NANO-RIBBON; LINE EDGE ROUGHNESS; NON-EQUILIBRIUM GREEN'S FUNCTION; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; OFF-CURRENT; ON-CURRENTS; QUANTUM TRANSPORT; ROUGHNESS PARAMETERS; SUBTHRESHOLD SWING; THIRD NEAREST NEIGHBOR INTERACTION; TIGHT BINDING MODEL;

FIELD EFFECT TRANSISTORS;

EID: 84870293610     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2218817     Document Type: Article

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