Structural and electrical characteristics of high-κ Er2 O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-5

  Chen, Fa Hsyang ^a   Her, Jim Long ^a   Shao, Yu Hsuan ^a   Matsuda, Yasuhiro H ^b   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Amorphous InGaZnO; Thin film transistor

Indexed keywords

DIELECTRIC MATERIALS; ERBIUM COMPOUNDS; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; GATE DIELECTRICS; II-VI SEMICONDUCTORS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); AMORPHOUS INGAZNO; ELECTRICAL CHARACTERISTIC; HIGH FIELD EFFECT MOBILITY; LOW THRESHOLD VOLTAGE; OFF CURRENT; SUBTHRESHOLD SWING; VOLTAGE STRESS;

THIN FILM TRANSISTORS;

EID: 84875162429     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-18     Document Type: Article

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