A-IGZO TFTs with inductively coupled plasma chemical vapor deposited SiOx Gate Dielectric

IEEE Transactions on Electron Devices

Volumn 60, Issue 8, 2013, Pages 2687-2690

  Xiao, Xiang ^a   Deng, Wei ^a   He, Xin ^a   Zhang, Shengdong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); Gate dielectric; Inductively coupled plasma chemical vapor deposition (ICP CVD); Low temperature; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); ATOMIC FORCE MICROSCOPE (AFM); INDIUM-GALLIUM-ZINC OXIDES; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURES; SCANNING ELECTRON MICROSCOPE; STEEP SUBTHRESHOLD SWINGS; THIN-FILM TRANSISTOR (TFTS);

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GALLIUM; GATE DIELECTRICS; INDIUM; INDUCTIVELY COUPLED PLASMA; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; VAPORS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84880908790     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2266414     Document Type: Article

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