High-performance amorphous indium gallium zinc oxide thin-film transistors with HfOxNy/HfO2/HfOxNy tristack gate dielectrics

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 42-44

  Yuan, Longyan ^a,b   Zou, Xiao ^a,c   Fang, Guojia ^a   Wan, Jiawei ^a   Zhou, Hai ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c JIANGHAN UNIVERSITY   (China)

Author keywords

Amorphous; HfO xNy; HfO2; high permittivity; indium gallium zinc oxide (IGZO); thin film transistors (TFTs)

Indexed keywords

AMORPHOUS; HFO XNY; HFO2; HIGH PERMITTIVITY; INDIUM GALLIUM ZINC OXIDE (IGZO);

AMORPHOUS FILMS; DIELECTRIC MATERIALS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INDIUM; PERMITTIVITY; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78650885424     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2089426     Document Type: Conference Paper

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