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Journal of Physics and Chemistry of Solids

Volumn 74, Issue 4, 2013, Pages 570-574

Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics

(7) Chen, Fa Hsyang a Hung, Meng Ning a Yang, Jui Fu b Kuo, Shou Yi a Her, Jim Long a Matsuda, Yasuhiro H c Pan, Tung Ming a

a CHANG GUNG UNIVERSITY (Taiwan)

b YUAN ZE UNIVERSITY (Taiwan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

A. Amorphous materials; A. Oxides; A. Semiconductors; D. Electrical properties

Indexed keywords

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); AMORPHOUS INGAZNO; ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; LOW TEMPERATURES; OXYGEN ANNEALING; SMOOTH SURFACE; SUBTHRESHOLD SWING;

AMORPHOUS MATERIALS; ANNEALING; ELECTRIC FIELD EFFECTS; GATE DIELECTRICS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84874115716 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2012.12.006 Document Type: Article

Times cited : (42)

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