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Volumn 88, Issue 22, 2013, Pages

Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells

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EID: 84890681379     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.224102     Document Type: Article
Times cited : (24)

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