CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

Materials Science and Engineering: B

Volumn 177, Issue 16, 2012, Pages 1460-1464

  Ribeiro, M ^a   Ferreira, L G ^b   Fonseca, L R C ^c   Ramprasad, R ^d  

^a Centro de Pesquisas Avançadas Wernher von Braun   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c UNIVERSITY OF CAMPINAS   (Brazil)

^d UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

Band gap; Band offset; Density functional theory; Excited states; Photovoltaic materials

Indexed keywords

CADMIUM TELLURIDE; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; II-VI SEMICONDUCTORS; INTERFACE STATES; INTERFACES (MATERIALS); SELENIUM COMPOUNDS;

AB INITIO CALCULATIONS; BAND ALIGNMENTS; BAND-GAP OFFSETS; BAND-OFFSET; DENSITY-FUNCTIONAL-THEORY; ELECTRONIC.STRUCTURE; EXCITED-STATES; PHOTOVOLTAIC MATERIALS; SELF-ENERGY CORRECTIONS; SPIN ORBITS;

ENERGY GAP;

EID: 84866030682     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.12.044     Document Type: Conference Paper

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