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Volumn 177, Issue 16, 2012, Pages 1497-1500

Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

(3) Patrocinio, Weslley S a Ribeiro, Mauro a Fonseca, Leonardo R C a

a Wernher von Braun Center for Advanced Research (Brazil)

Author keywords

Charge trapping; Computational materials; LDA 1 2; Self energy correction; Silicon nitride; SONOS

Indexed keywords

CHARGE TRAPPING; DEFECT STATES; ELECTRONIC PROPERTIES; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; MICROELECTRONICS; NONVOLATILE STORAGE; SILICA; SILICON OXIDES;

BANDS EDGES; CHARGE-TRAPPING; COMPUTATIONAL MATERIALS; DEFECT CONCENTRATIONS; DEFECT STATE; LDA-1/2; SELF-ENERGY CORRECTIONS; SONOS; THEORETICAL STUDY; TRAPPING LEVELS;

SILICON NITRIDE;

EID: 84866035860 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2012.02.028 Document Type: Conference Paper

Times cited : (7)

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