Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

New Journal of Physics

Volumn 15, Issue , 2013, Pages

  Kioupakis, Emmanouil ^a   Yan, Qimin ^b   Steiauf, Daniel ^b   Van De Walle, Chris G ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; CARRIER RECOMBINATION; FIRST-PRINCIPLES CALCULATION; POLARIZATION FIELD; RADIATIVE RECOMBINATION; RECOMBINATION COEFFICIENT; SOLID STATE LIGHTING; TEMPERATURE DEPENDENCE;

CALCULATIONS; CARRIER CONCENTRATION; EFFICIENCY; LIGHT EMITTING DIODES; NITRIDES; OPTOELECTRONIC DEVICES; PHASE SPACE METHODS;

AUGERS;

EID: 84890519636     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/15/12/125006     Document Type: Article

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