Investigation of efficiency-droop mechanisms in multi-quantum-well InGaN/GaN blue light-emitting diodes

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1402-1409

  Saguatti, Davide ^a   Bidinelli, Luca ^a   Verzellesi, Giovanni ^a   Meneghini, Matteo ^b   Meneghesso, Gaudenzio ^b   Zanoni, E ^b   Butendeich, Rainer ^c   Hahn, Berthold ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Efficiency droop; GaN light emitting diode (LED); internal quantum efficiency (IQE); numerical device simulation

Indexed keywords

AUGER RECOMBINATION; BLUE LIGHT-EMITTING; CARRIER CAPTURE; DROOP CHARACTERISTICS; ELECTRON LEAKAGE; EXPERIMENTAL DATA; EXTREME VALUE; GAN LIGHT-EMITTING DIODES; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; MULTIQUANTUM WELLS; NUMERICAL DEVICE SIMULATION; P-TYPE DOPING; QUANTITATIVE AGREEMENT;

AUGERS; DIODES; EFFICIENCY; GALLIUM NITRIDE; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 84860262037     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2186579     Document Type: Article

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