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Volumn 100, Issue 6, 2012, Pages

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbO x films

(12) Bae, Jieun a Hwang, Inrok a Jeong, Yuhyun b Kang, Sung Oong c Hong, Sahwan a Son, Jongwan a Choi, Jinsik a Kim, Jinsoo a Park, June b Seong, Maeng Je b Jia, Quanxi a,d Ho Park, Bae a

a Konkuk University (South Korea)

b Chung Ang University (South Korea)

c Gwangju Institute of Science and Technology (GIST) (South Korea)

d LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; CONDUCTING FILAMENT; ELECTRICAL STRESS; LAYERED STRUCTURES; SELF-ASSEMBLED; THICKNESS DEPENDENCE; THRESHOLD RESISTANCE; THRESHOLD SWITCHING; TRANSMISSION ELECTRON MICROSCOPE; VOLUME RATIO;

NIOBIUM OXIDE; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SWITCHING;

EID: 84863116249 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3685485 Document Type: Article

Times cited : (43)

References (18)

1
- 41149099157
- Materials science: Who wins the nonvolatile memory race?
- DOI 10.1126/science.1153909
- G. I. Meijer, Science 319, 1625 (2008). 10.1126/science.1153909 (Pubitemid 351432488)
- (2008) Science , vol.319 , Issue.5870 , pp. 1625-1626
- Meijer, G.I.¹

2
- 35748974883
- Nanoionics-based resistive switching memories
- DOI 10.1038/nmat2023, PII NMAT2023
- R. Waser, and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
- (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
- Waser, R.¹ Aono, M.²

3
- 19944434155
- Reproducible resistance switching in polycrystalline NiO films
- DOI 10.1063/1.1831560
- S. Seo, M.-J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I.-K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, Appl. Phys. Lett. 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
- (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Park, B.H.¹³

4
- 76649133422
- 10.1038/nnano.2009.456
- D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. Li, G.-S. Park, B. Lee, S. Han, Nature Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nature Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰

5
- 33645641019
- 10.1038/nmat1614
- K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mater. 5, 312 (2006). 10.1038/nmat1614
- (2006) Nature Mater. , vol.5 , pp. 312
- Szot, K.¹ Speier, W.² Bihlmayer, G.³ Waser, R.⁴

6
- 36549083365
- 10.1002/adma.v19:22
- M.-J. Lee, Y. S. Park, D.-S. Suh, E.-H. Lee, S. Seo, D.-C. Kim, R. J. Jung, B.-S. Kang, S.-E. Ahn, C. B. Lee, Adv. Mater. 19, 3919 (2007). 10.1002/adma.v19:22
- (2007) Adv. Mater. , vol.19 , pp. 3919
- Lee, M.-J.¹ Park, Y.S.² Suh, D.-S.³ Lee, E.-H.⁴ Seo, S.⁵ Kim, D.-C.⁶ Jung, R.J.⁷ Kang, B.-S.⁸ Ahn, S.-E.⁹ Lee, C.B.¹⁰

7
- 33846428065
- 10.1002/adma.v19:1
- M.-J. Lee, S. Seo, D.-C. Kim, S.-E. Ahn, D. H. Seo, I.-K. Yoo, I.-G. Baek, D.-S. Kim, I.-S. Byun, I.-R. Hwang, Adv. Mater. 19, 73 (2007). 10.1002/adma.v19:1
- (2007) Adv. Mater. , vol.19 , pp. 73
- Lee, M.-J.¹ Seo, S.² Kim, D.-C.³ Ahn, S.-E.⁴ Seo, D.H.⁵ Yoo, I.-K.⁶ Baek, I.-G.⁷ Kim, D.-S.⁸ Byun, I.-S.⁹ Hwang, I.-R.¹⁰

8
- 54949154898
- 10.1002/adma.200702932
- B.-S. Kang, S.-E. Ahn, M.-J. Lee, G. Stefanovich, K. H. Kim, W. X. Xianyu, C. B. Lee, Y. Park, I. G. Baek, and B. H. Park, Adv. Mater. 20, 3066 (2008). 10.1002/adma.200702932
- (2008) Adv. Mater. , vol.20 , pp. 3066
- Kang, B.-S.¹ Ahn, S.-E.² Lee, M.-J.³ Stefanovich, G.⁴ Kim, K.H.⁵ Xianyu, W.X.⁶ Lee, C.B.⁷ Park, Y.⁸ Baek, I.G.⁹ Park, B.H.¹⁰

9
- 77955744722
- 10.1063/1.3477953
- I. R. Hwang, M.-J. Lee, G.-H. Buh, J. Bae, J. S. Choi, J.-S. Kim, S. H. Hong, Y. S. Kim, I.-S. Byun, S.-W. Lee, Appl. Phys. Lett. 97, 052106 (2010). 10.1063/1.3477953
- (2010) Appl. Phys. Lett. , vol.97 , pp. 052106
- Hwang, I.R.¹ Lee, M.-J.² Buh, G.-H.³ Bae, J.⁴ Choi, J.S.⁵ Kim, J.-S.⁶ Hong, S.H.⁷ Kim, Y.S.⁸ Byun, I.-S.⁹ Lee, S.-W.¹⁰

10
- 58949104009
- 10.1103/PhysRevLett.102.026801
- S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D.-W. Kim, and T. W. Noh, Phys. Rev. Lett. 102, 026801 (2009). 10.1103/PhysRevLett. 102.026801
- (2009) Phys. Rev. Lett. , vol.102 , pp. 026801
- Chang, S.H.¹ Lee, J.S.² Chae, S.C.³ Lee, S.B.⁴ Liu, C.⁵ Kahng, B.⁶ Kim, D.-W.⁷ Noh, T.W.⁸

11
- 78650362199
- 10.1063/1.3525710
- K. Jung, Y. Kim, W. Jung, H. Im, B. Park, J. Hong, J. Lee, J. Park, and J.-K. Lee, Appl. Phys. Lett. 97, 233509 (2010). 10.1063/1.3525710
- (2010) Appl. Phys. Lett. , vol.97 , pp. 233509
- Jung, K.¹ Kim, Y.² Jung, W.³ Im, H.⁴ Park, B.⁵ Hong, J.⁶ Lee, J.⁷ Park, J.⁸ Lee, J.-K.⁹

12
- 19044363374
- 5 for nonvolatile memory application
- DOI 10.1109/LED.2005.846592
- H. Sim, D. Choi, D. Lee, S. Seo, M.-J. Lee, I.-K. Yoo, and H. Hwang, IEEE Electron Device Lett. 26, 292 (2005). 10.1109/LED.2005.846592 (Pubitemid 40708833)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.5 , pp. 292-294
- Sim, H.¹ Choi, D.² Lee, D.³ Seo, S.⁴ Lee, M.-J.⁵ Yoo, I.-K.⁶ Hwang, H.⁷

13
- 35949040018
- 10.1103/RevModPhys.50.209
- D. Adler, H. K. Henisch, and S. N. Mott, Rev. Mod. Phys. 50, 209 (1978). 10.1103/RevModPhys.50.209
- (1978) Rev. Mod. Phys. , vol.50 , pp. 209
- Adler, D.¹ Henisch, H.K.² Mott, S.N.³

14
- 33751500171
- 10.1021/cm00013a025
- J.-M. Jehng and I. E. Wachs, Chem. Mater. 3, 100 (1991). 10.1021/cm00013a025
- (1991) Chem. Mater. , vol.3 , pp. 100
- Jehng, J.-M.¹ Wachs, I.E.²

15
- 28844457493
- 10.1016/j.jcat.2005.11.002
- E. Heracleous, A. A. Lemonidou, J. Catal. 237, 162 (2006). 10.1016/j.jcat.2005.11.002
- (2006) J. Catal. , vol.237 , pp. 162
- Heracleous, E.¹ Lemonidou, A.A.²

16
- 0000841112
- 10.1021/cr9800208
- I. Nowak and M. Ziolek, Chem. Rev. 99, 3603 (1999). 10.1021/cr9800208
- (1999) Chem. Rev. , vol.99 , pp. 3603
- Nowak, I.¹ Ziolek, M.²

17
- 70349907463
- 10.1063/1.3242337
- G.-H. Buh, I. Hwang, and B. H. Park, Appl. Phys. Lett. 95, 142101 (2009). 10.1063/1.3242337
- (2009) Appl. Phys. Lett. , vol.95 , pp. 142101
- Buh, G.-H.¹ Hwang, I.² Park, B.H.³

18
- 77958158859
- 10.1063/1.3489938
- G.-H. Buh, I. Hwang, and B. H. Park, J. Appl. Phys. 108, 074101 (2010). 10.1063/1.3489938
- (2010) J. Appl. Phys. , vol.108 , pp. 074101
- Buh, G.-H.¹ Hwang, I.² Park, B.H.³

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