A physics-based compact model of metal-oxide-based RRAM DC and AC operations

IEEE Transactions on Electron Devices

Volumn 60, Issue 12, 2013, Pages 4090-4097

  Huang, Peng ^a   Liu, Xiao Yan ^a   Chen, Bing ^a   Li, Hai Tong ^a   Wang, Yi Jiao ^a   Deng, Ye Xin ^a   Wei, Kang Liang ^a   Zeng, Lang ^a   Gao, Bin ^a   Du, Gang ^a   Zhang, Xing ^a   Kang, Jin Feng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Circuit simulation; compact model; conduction of resistive switching random access memory (RRAM); conductive filament's evolution; parasitic effect; pulse mode; resistive switching

Indexed keywords

COMPACT MODEL; CONDUCTIVE FILAMENTS; PARASITIC EFFECT; PULSE MODES; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING;

CIRCUIT SIMULATION; FIELD EFFECT TRANSISTORS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84889589255     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2287755     Document Type: Article

References (29)

1. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nature Mater., vol. 6, pp. 833-840, Nov. 2007. (Pubitemid 350064191)
2. H. S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, et al., "Metal-oxide RRAM," Proc. IEEE, vol. 100, no. 6, pp. 1951-1970, Jun. 2012.
3. M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, et al., "A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5?x/TaO2?x bilayer structures," Nature Mater., vol. 10, pp. 625-630, Jul. 2011.
4. H. Akinaga and H. Shima, "Resistive random access memory (ReRAM) based on metal oxides," Proc. IEEE, vol. 98, no. 12, pp. 2237-2251, Dec. 2010.
5. B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, et al., "10×10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation," in Proc. IEEE IEDM, Dec. 2011, pp. 729-732.
6. I. G. Baek, C. J. Park, H. Ju, D. J. Seong, H. S. Ahn, J. H. Kim, et al., "Realization of vertical resistive memory (VRRAM) using cost effective 3D process," in Proc. IEEE IEDM, Dec. 2011, pp. 737-740.
7. N. Xu, L. F. Liu, X. Sun, X. Y. Liu, D. D. Han, Y. Wang, et al., "Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories," Appl. Phys. Lett., vol. 92, no. 23, pp. 232112-1-232112-3, Jun. 2008.
8. G. Bersuker, D. C. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, et al., "Metal oxide RRAM switching mechanism based on CF microscopic properties," in Proc. IEEE IEDM, Dec. 2010, pp. 456-459.
9. Y. S. Chen, H. Y. Lee, P. S. Chen, C. H. Tsai, P. Y. Gu, T. Y.Wu, et al., "Challenges and opportunities for HfOX based resistive random access memory," in Proc. IEEE IEDM, Dec. 2011, pp. 717-720.
10. J. L. Liang and H.-S. P. Wong, "Cross-point memory array without cell selectors-device characteristics and data storage pattern dependencies," IEEE Trans. Electron Devices, vol. 57, no. 10, pp. 2531-2538, Oct. 2010.
11. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistiveswitching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.
12. X. M. Guan, S. M. Yu, and H.-S. P. Wong, "On the switching parameter variation of metal-oxide RRAM-Part I: Physical modeling and simulation methodology," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 1172-1182, Apr. 2012.
13. L. Vandelli, A. Padovani, L. Larcher, G. Broglia, G. Ori, M. Montorsi, et al., "Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices," in Proc. IEEE IEDM, Dec. 2011, pp. 421-424.
14. P. Huang, B. Gao, B. Chen, F. F. Zhang, L. F. Liu, G. Du, et al., "Stochastic simulation of forming, SET and RESET process for transition metal oxide-based resistive switching memory," in Proc. SISPAD, 2012, pp. 312-315.
15. X. M. Guan, S. M. Yu, and H.-S. P. Wong, "A SPICE compact model of metal oxide resistive switching memory with variations," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1405-1407, Oct. 2012.
16. H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, "A parameterized SPICE macromodel of resistive random access memory and circuit demonstration," in Proc. SISPAD, Sep. 2011, pp. 163-166.
17. P. Sheridan, K.-H. Kim, S. Gaba, T. Chang, L. Chen, and W. Lu, "Device and SPICE modeling of RRAM devices," Nanoscale, vol. 3, no. 9, pp. 3833-3840, 2011.
18. R. Degraeve, A. Fantini, S. Clima, B. Govoreanu, L. Goux, Y. Y. Chen, et al., "Dynamic 'hour glass' model for SET and RESET in HfO2 RRAM," in Proc. Symp. VLSI Technol., Jun. 2012, pp. 75-76.
19. P. Huang, X. Y. Liu, W. H. Li, Y. X. Deng, B. Chen, Y. Lu, et al., "A physical based analytic model of RRAM operation for circuit simulation," in Proc. IEEE IEDM, Dec. 2012, pp. 605-608.
20. D. Ielmini, F. Nardi, C. Cagli, and A. L. Lacaita, "Size-dependent retention time in NiO-based resistive-switching memories," IEEE Electron Device Lett., vol. 31, no. 4, pp. 353-355, Apr. 2010.
21. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials. Oxford, U.K.: Clarendon, 1979.
22. F. M. Puglisi, L. Larcher, G. Bersuker, A. Padovani, and P. Pavan, "An empirical model for RRAM resistance in low-and high-resistance states," IEEE Electron Device Lett., vol. 34, no. 3, pp. 387-389, Mar. 2013.
23. G. Jegert, A. Kersch, W. Weinreich, U. Schröder, and P. Lugli, "Modeling of leakage currents in high-? dielectrics: Three-dimensional approach via kinetic Monte Carlo," Appl. Phys. Lett., vol. 96, no. 6, pp. 062113-1-062113-3, Feb. 2010.
24. S. M. Yu, B. Gao, Z. Fang, H. Y. Yu, J. F. Kang, and H.-S. P. Wong, "A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling," in Proc. IEEE IEDM, Dec. 2011, pp. 239-242.
25. Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong, "HfOx/TiOx/HfOx/TiOx multilayer-based forming-free RRAM devices with excellent uniformity," IEEE Electron Device Lett., vol. 32, no. 4, pp. 566-568, Apr. 2011.
26. X. Zhao and D. Vanderbilt, "First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide," Phys. Rev. B., vol. 65, no. 23, pp. 233106-1-233106-4, Jun. 2002.
27. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, et al., "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM," in Proc. IEEE IEDM, Dec. 2008, pp. 297-300.
28. S. M. Yu, Y. Wu, and H.-S. P. Wong, "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory," Appl. Phys. Lett., vol. 98, no. 10, pp. 103514-1-103514-3, Mar. 2011.
29. Y. Y. Chen, L. Goux, S. Clima, B. Govoreanu, R. Degraeve, G. S. Kar, et al., "Endurance/retention trade-off on HfO2/metal cap 1T1R bipolar RRAM," IEEE Trans. Electron Devices, vol. 60, no. 3, pp. 1114-1121, Mar. 2013.