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Volumn 103, Issue 4, 2013, Pages

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; DENSITY OF LOCALIZED STATE; THRESHOLD SWITCHING;

ELECTRONIC STRUCTURE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ELLIPSOMETRY; THRESHOLD VOLTAGE;

AMORPHOUS FILMS;

EID: 84884992229 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4816349 Document Type: Article

Times cited : (33)

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