Merging Nanoepitaxy and Nanophotonics

Future Trends in Microelectronics: Up the Nano Creek

Volumn , Issue , 2007, Pages 401-431

  Ledentsov, N N ^a,b   Shchukin, V A ^a,b   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Defect engineering; Defect reduction; Merging nanoepitaxy; Nanophotonics; Novel devices

Indexed keywords

EID: 84889495228     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470168264.ch36     Document Type: Chapter

References (39)

1. V. A. Shchukin, N. N. Ledentsov, and D. Bimberg, Epitaxy of Nanostructures, Berlin: Springer, 2003.
2. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Hetero-structures, Chichester, UK: Wiley, 1999.
3. N. N. Ledentsov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, I. G. Tabatadze, and P. S. Kop'ev, "Optical properties of hetero-structures with InGaAs-GaAs quantum clusters," Semicond. 28, 832(1994).
4. V. A. Shchukin, A. I. Borovkov, N. N. Ledentsov, and D. Bimberg, "Tuning and breakdown of faceting under externally applied stress," Phys. Rev. B 51, 10104(1995).
5. R. Nôtzel, N. N. Ledentsov, L. Dâweritz, K. Ploog, and M. Hohenstein, "Semiconductor quantum wire structures directly grown on high-index surfaces," Phys. Rev. B 45, 3507(1992).
6. R. Noetzel, N. N. Ledentsov, L. Daeweritz, and K. Ploog, "Method of fabricating a compositional semiconductor device," U.S. Patent 5,714,765 (1998).
7. S. Nakamura, M. Senoh, S. Nagahama, et al., "Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation," Appl. Phys. Lett. 70, 2753(1997).
8. N. N. Ledentsov "Vertical-cavity surface-emitting lasers using InGaN quantum dots," Compound Semicond. 5, 61(1999).
9. R. Seguin, S. Rodt, A. Strittmatter, et al., "Multi-excitonic complexes in single InGaN quantum dots," Appi. Phys. Lett. 84, 2753(2004).
10. I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, et ai, "Quantum dot origin of luminescence in InGaN-GaN structures," Phys. Rev. B 66, 155310(2002).
11. I. Krestnikov, D. Livshits, S. Mikhrin, A. Kozhukhov, A. Kovsh, N. N. Ledentsov, and A. Zhukov, "Reliability study of InAs-InGaAs quantum dot diode lasers," Electronics Lett. 41, 1330(2005).
12. N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, et al., "1.3-1.5 urn quantum dot lasers on foreign substrates: Growth using defect reduction technique, high-power cw operation, and degradation resistance," Proc. SPIE 6133, 61330S (2006).
13. F. Hopfer, A. Mutig, G. Fiol, et ai, "20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots" Proc. SPIE 6350, 6(2006).
14. N. N. Ledentsov and V. Shchukin, "Optoelectronic device based on an antiwaveguiding cavity," U.S. Patent application 2005/0226294, published October 13, 2005.
15. L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. Leroux, "Growth by molecular-beam epitaxy and characterization of InAs/GaAs strained-layer superlattices," Appi. Phys. Lett. 47. 1099 (1985).
16. F. Glas, C. Guille, P. Hénoc, and F. Houzay "TEM study of the molecular beam epitaxy island growth of InAs on GaAs" in: A. G. Cullis and P. D. Augustus, eds., Proc. Microscopy Semiconducting Mater. (1987), Oxford: Institute of Physics, 1987.
17. O. Brandt, M. Ilg, and K. Ploog, "Coherently strained InAs insertions in GaAs: Do they form quantum wires and dots?" Microelectronics J. 26, 861(1995).
18. N. N. Ledentsov, M. Grandmami, N. Kirstaedter, et al., "Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing," Sol id State Electronics 40, 785(1996).
19. N. N. Ledentsov, V. A. Shchukin, D. Bimberg, et al., "Reversibility of the island shape, volume, and density in Stranski-Krastanow growth," Semicond. Sci. Technol. 16, 502(2001).
20. N. N. Ledentsov, M. V. Maximov, D. Bimberg, et ai, "1.3 urn luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition," Semicond. Sci. Technol. 15, 604(2000).
21. D. S. Sizov, M. V. Maksimov, A. F. Tsatsul'nikov, et al, "The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix," Semicond. 36, 1020(2002).
22. N.N. Ledentsov, "Semiconductor device and method of making same," U.S. Patent 6,653,166 (2003).
23. V. A. Shchukin and N. N. Ledentsov, "Defect-free semiconductor templates for epitaxial growth and method of making same," U.S. Patent 6,784,074 (2004).
24. N. N. Ledentsov and D. Bimberg, "Growth of self-organized quantum dots for optoelectronic applications: Nanostructures, nanoepitaxy, defect engineering," J. Cryst. Growth 255, 68(2003).
25. N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, et al, "QD lasers: Physics and applications," Proc. SPIE 5624, 335(2005).
26. A. Lenz, H. Eisele, R. Timm, et al, "Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy," Appi. Phys. Lett. 85, 3848(2004).
27. N. N. Ledentsov, A. R. Kovsh, A. E.Zhukov, et al, "High performance quantum dot lasers on GaAs substrates operating in 1.5 um range," Electronics Lett. 39, 1126(2003).
28. T. Kettler, L. Ya. Karachinsky, N. N. Ledentsov, et al, "Degradation-robust single mode continuous wave operation of 1.46 um metamorphic quantum dot lasers on GaAs substrate," Appi Phys. Lett. 89, 041113(2006).
29. L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, et al, "High-power single mode cw operation of 1.5 um-range quantum dot GaAs-based laser," Electronics Lett. 41, 478(2005).
30. N. N.Ledentsov and V. A. Shchukin, "Novel concepts for injection lasers," SPIE Optical Eng. 41, 3193(2002).
31. V. A. Shchukin and N. N. Ledentsov, "Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same," U.S. Patent 6,804,280 B2 (2004).
32. M. V.Maximov, Yu. M. Shernyakov, 1.1. Novikov, et al, "High power GalnP/AlGalnP visible lasers (k = 646 nm) with narrow circular shaped far field pattern," Electronics Lett. 41, 741(2005).
33. I. I. Novikov, L. Ya. Karachinsky, M. V. Maximov, et al, "Single mode cw operation of 658 nm AlGalnP lasers based on longitudinal photonic band gap crystal," Appi Phys. Lett. 88, 231108(2006).
34. V. A. Shchukin, N. N. Ledentsov, N. Yu. Gordeev, et al, "High brilliance photonic band crystal lasers," Proc. SPIE 6350, 635005(2006).
35. N. N. Ledentsov and V. A. Shchukin, "Tilted cavity semiconductor laser (TCSL) and method of making same," U.S. Patent 7,031,360 (2006).
36. N. N. Ledentsov, V. A. Shchukin, S. S. Mikhrin, et al, "Wavelength-stabilized tilted cavity quantum dot laser," Semicond. Sci. Technol. 19, 1183(2004).
37. N. N. Ledentsov, V. A. Shchukin, A. R. Kovsh, et al, "Edge and surface-emitting tilted cavity lasers," Proc. SPIE 5722, 130(2005).
38. N. N. Ledentsov and V. A. Shchukin, to be published.
39. A. Paraskevopoulos, H.-J. Hensel, W.-D. Molzow, et al, "Ultra-high-bandwidth (>35 GHz) electrooptically-modulated VCSEL," paper PDP22 presented at OFC/NFOEC 2006, Anaheim, CA (March, 2006).