Single mode cw operation of 658 nm AlGaInP lasers based on longitudinal photonic band gap crystal

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Novikov, I I ^a   Karachinsky, L Ya ^a,c   Maximov, M V ^a   Shernyakov, Yu M ^a   Kuznetsov, S M ^a   Gordeev, N Yu ^a   Shchukin, V A ^a,c   Kop'Ev, P S ^a   Ledentsov, N N ^a,c   Ben Ami, U ^b   Kalosha, V P ^b,e   Sharon, A ^b   Kettler, T ^c   Posilovic, K ^c   Bimberg, D ^c   Mikhelashvili, V ^d   Eisenstein, G ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b PBC Lasers Ltd   (Israel)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^e UNIVERSITY OF OTTAWA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; LASER APPLICATIONS; LASER BEAMS; MIRRORS; OPTICAL COATINGS; WAVEGUIDES;

GAINP-ALGAINP LASERS; LONGITUDINAL PHOTONIC BAND GAP CRYSTAL; REFLECTION/ANTIREFLECTION FACET COATINGS;

CRYSTAL ATOMIC STRUCTURE;

EID: 33745026658     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2211948     Document Type: Article

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