Reliability study of InAs/InGaAs quantum dot diode lasers

Electronics Letters

Volumn 41, Issue 24, 2005, Pages 1330-1331

  Krestnikov, I ^a   Livshits, D ^a   Mikhrin, S ^a   Kozhukhov, A ^a   Kovsh, A ^a   Ledentsov, N ^a   Zhukov, A ^b  

^a NL Nanosemiconductor GmbH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AGING OF MATERIALS; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

ACCELERATED AGEING; ACTIVE REGION; RIDGE-WAVEGUIDE LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 28444472429     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053336     Document Type: Article

References (6)

1. Liu, G.T.: et al. ' The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structure ', IEEE J. Quantum Electron., 2000, 36, p. 1272-1279
2. Kovsh, A.R.: et al. ' InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency ', Electron. Lett., 2002, 38, p. 1104-1106
3. Kovsh, A.R.: et al. ' Long-wavelength (1.3 to 1.5 μm) quantum dot lasers based on GaAs ', Proc. SPIE, 2004, 5349, p. 31-45
4. Lundina, E.Yu.: et al. ' Long-termstabilityof long-wavelength (>1.25 μm) quantum-dotlasers fabricated on GaAs substrates ', Tech. Phys., 2003, 48, p. 131-132
5. Mikhrin, S.S.: et al. ' High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers ', Semicond. Sci. Technol., 2005, 20, p. 340-342
6. Zhukov, A.E.: et al. ' Continuous wave operation of long-wavelength quantum dot diode laser on a GaAs substrate ', IEEE Photonics Technol. Lett., 1999, 11, p. 1345-1347