Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3848-3850

  Lenz, A ^a   Eisele, H ^a   Timm, R ^a   Backer, S K ^a   Sellin, R L ^a   Pohl, U W ^a   Bimberg, D ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DATA ACQUISITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; SANDWICH STRUCTURES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

ELECTROCHEMICALLY ETCHED TUNGSTUN; NANOVOIDS; STRAIN-INDUCED ERUPTION; ULTRAHIGH VACUUM (UHV);

INDIUM COMPOUNDS;

EID: 9744265668     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808884     Document Type: Article

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