20 Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6350, Issue , 2006, Pages

  Hopfer, F ^a   Mutig, A ^a   Fiol, G ^a   Kuntz, M ^a   Mikhrin, S S ^b   Krestnikov, I L ^b   Livshits, D A ^b   Kovsh, A R ^b   Bornholdt, C ^c   Shchukin, V ^a   Ledentsov, N N ^a   Gaysler, V ^a,e   Zakharov, N D ^d   Werner, P ^d   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b NL Nanosemiconductor GmbH   (Germany)

^c FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^e INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

High speed modulation; InGaAs; Quantum dot devices; Vertical cavity surface emitting lasers

Indexed keywords

HIGH SPEED MODULATION; INGAAS; QUANTUM DOT DEVICES; VERTICAL CAVITY SURFACE EMITTING LASERS;

BANDWIDTH; BIT ERROR RATE; MONOLAYERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 33749831434     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.693006     Document Type: Conference Paper

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