QD lasers: Physics and applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5624, Issue , 2005, Pages 335-344

  Ledentsov, N N ^a,b,f   Kovsh, A R ^a   Shchukin, V A ^a   Mikhrin, S S ^a   Krestnikov, I L ^a   Kozhukhov, A V ^a   Karachinsky, L Ya ^b   Maximov, M V ^b   Novikov, I I ^b   Shernyakov, Yu M ^b   Soshnikov, I P ^b   Zhukov, A E ^b   Portnoi, E L ^b   Ustinov, V M ^b   Gerthsen, D ^c   Bhattacharya, P ^d   Zakharov, N F ^e   Werner, P ^e   Hopfer, F ^f   Kuntz, M ^f   Bimberg, D ^f   more..

^a NL Nanosemiconductor GmbH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF KARLSRUHE   (Germany)

^d UNIVERSITY OF MICHIGAN   (United States)

^e MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^f TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Diode lasers; Epitaxial growth; Quantum dots

Indexed keywords

BANDGAP MATERIAL; MATRIX MATERIAL; QUANTUM DOT (QD) LASERS; SINGLE-CRYSTALLINE MATRIX;

EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT AMPLIFIERS; OSCILLATIONS; POLARIZATION; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS;

LASERS;

EID: 20244381262     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.570284     Document Type: Conference Paper

References (34)

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