1.3-1.5 μm quantum dot lasers on foreign substrates: Growth using defect reduction technique, high-power CW operation, and degradation resistance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6133, Issue , 2006, Pages

  Ledentsov, N N ^a,b,d   Kovsh, A R ^a   Shchukin, V A ^a,b,d   Mikhrin, S S ^a   Krestnikov, I L ^a   Kozhukhov, A V ^a   Karachinsky, L Ya ^b   Maximov, M V ^b   Novikov, I I ^b   Shernyakov, Yu M ^b   Soshnikov, I P ^b   Zhukov, A E ^b   Musikhin, Yu G ^b   Ustinov, V M ^b   Zakharov, N D ^c   Werner, P ^c   Kettler, T ^d   Posilovic, K ^d   Bimberg, D ^d   Hu, M ^e   Nguyen, H K ^e   Song, K ^e   Zah, Chung En ^e   more..

^a NL Nanosemiconductor GmbH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e Corning Incorporated ^*  (United States)

Author keywords

Diode lasers; Epitaxial growth; Quantum dots

Indexed keywords

CONTINUOUS WAVE LASERS; DEGRADATION; EPITAXIAL GROWTH; LIGHT; OPTICAL PROPERTIES; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM DOTS;

CATASTROPHIC OPTICAL MIRROR DAMAGE (COMD); DEFECT-FREE LAYERS; DEGRADATION RESISTANCE; THREADING DISLOCATIONS;

SEMICONDUCTOR LASERS;

EID: 33646732635     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.641483     Document Type: Conference Paper

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