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Japanese Journal of Applied Physics

Volumn 52, Issue 11 PART 2, 2013, Pages

Single GaN-based nanowires for photodetection and sensing applications

(4) Den Hertog, Martien a Songmuang, Rudeesun a Gonzalez Posada, Fernando b Monroy, Eva b

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-SHELL HETEROSTRUCTURE; HETEROSTRUCTURED NANOWIRES; MATERIAL ENGINEERING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL DISTRIBUTIONS; SENSING APPLICATIONS; STRAIN DISTRIBUTIONS; THEORETICAL CALCULATIONS;

GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTODETECTORS; STRUCTURAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 84889033131 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.11NG01 Document Type: Conference Paper

Times cited : (16)

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