Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography

Ultramicroscopy

Volumn 106, Issue 2, 2006, Pages 105-113

  Kruse, P ^a   Schowalter, M ^b   Lamoen, D ^c   Rosenauer, A ^b   Gerthsen, D ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Density functional theory; Electron holography; Mean inner potential

Indexed keywords

APPROXIMATION THEORY; ELECTRON HOLOGRAPHY; GERMANIUM; PROBABILITY DENSITY FUNCTION; SILICON; VACUUM APPLICATIONS;

CRYSTAL REGION; HARTREE FOCK CALCULATIONS; MEAN INNER POTENTIAL; VACUUM REGION;

SEMICONDUCTOR MATERIALS;

GERMANIUM; SCATTER FACTOR; SILICON;

ARTICLE; CALCULATION; CRYSTAL; DENSITY FUNCTIONAL THEORY; ELECTRON; EXPERIMENT; HOLOGRAPHY; MATHEMATICAL COMPUTING; SEMICONDUCTOR; VACUUM;

EID: 28844486246     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2005.06.057     Document Type: Article

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