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Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

(9) Songmuang, R a Kalita, D a Sinha, P a Den Hertog, M a Andre R a Ben, T b Gonzlez, D b Mariette, H a Monroy, E a

a CEA GRENOBLE (France)

b UNIVERSITY OF CÁDIZ (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; COMPRESSIVE STRAIN; DECAY TIME; INTERNAL ELECTRIC FIELDS; MOLE FRACTION; QD STACKS; SPONTANEOUS POLARIZATIONS; THERMALLY STABLE; TRANSITION ENERGY;

ALUMINUM; ELECTRIC FIELDS; ELECTRIC WIRE; GALLIUM; NANOWIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80053939745 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3646389 Document Type: Article

Times cited : (24)

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