Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

Applied Physics Letters

Volumn 102, Issue 21, 2013, Pages

  Gonzalez Posada F ^a,c   Songmuang, R ^b   Den Hertog, M ^b   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; III-V SEMICONDUCTORS; NANOWIRES; PHOTODETECTORS; PHOTONS;

CARRIER DYNAMICS; ENVIRONMENTAL SENSITIVITIES; FERMI LEVEL PINNING; PERSISTENT PHOTOCONDUCTIVITY; PHOTO DETECTION; STRONG DEPENDENCES; SURFACE BAND BENDING; THREE ORDERS OF MAGNITUDE;

GALLIUM NITRIDE;

EID: 84879106322     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808017     Document Type: Article

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