High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

Diamond and Related Materials

Volumn 41, Issue , 2014, Pages 34-40

  Tallaire, A ^a   Achard, J ^a   Boussadi, A ^a   Brinza, O ^a   Gicquel, A ^a   Kupriyanov, I N ^b   Palyanov, Y N ^b,d   Sakr, G ^c   Barjon, J ^c  

^a UNIVERSITÉ PARIS 13   (France)

^b SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY   (Russian Federation)

^c LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

^d NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Crystal orientation; NV defects; Plasma assisted CVD; Power electronics; Single crystal diamond

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; ELECTRONICS APPLICATIONS; HIGH PRESSURE HIGH TEMPERATURE; HIGHER EMISSION INTENSITY; NV DEFECTS; PLASMA-ASSISTED CVD; PREFERENTIAL ORIENTATION; SINGLE CRYSTAL DIAMOND;

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DEFECTS; DIAMOND FILMS; PLASMA CVD; POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS;

FILM GROWTH;

EID: 84888579964     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2013.11.002     Document Type: Article

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