Electrical properties of lateral p-n junction diodes fabricated by selective growth of n + diamond

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 9, 2012, Pages 1761-1764

  Hoshino, Yuto ^a   Kato, Hiromitsu ^b,c   Makino, Toshiharu ^b,c   Ogura, Masahiko ^b,c   Iwasaki, Takayuki ^a,c   Hatano, Mutsuko ^a,c   Yamasaki, Satoshi ^b,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

diamond; lateral junction; p n junction diode; selective growth

Indexed keywords

BORON-DOPED; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEPLETION LAYER; HOMOEPITAXIAL GROWTH; LATERAL JUNCTION; LOW-LEAKAGE CURRENT; MICROWAVE CHEMICAL VAPOR DEPOSITION; N-TYPE DIAMOND; P-TYPE; PHOSPHORUS-DOPED; PN JUNCTION DIODES; RECTIFICATION RATIO; REVERSE BIAS; ROOM TEMPERATURE; SELECTIVE GROWTH; STRUCTURAL AND ELECTRICAL PROPERTIES;

CHEMICAL VAPOR DEPOSITION; DIAMONDS; DIODES; ELECTRON BEAMS; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC PROPERTIES;

EID: 84866369886     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200053     Document Type: Article

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