Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H 2/O 2 plasma etching treatment: Part of topical section on fundamentals and applications of diamond

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 9, 2012, Pages 1715-1720

  Naamoun, M ^a   Tallaire, A ^a   Silva, F ^a   Achard, J ^a   Doppelt, P ^a   Gicquel, A ^a  

^a CNRS   (France)

Author keywords

CVD; diamond; etching; extended defects; HPHT; misorientation

Indexed keywords

CHEMICAL VAPOR DEPOSITION DIAMOND; CVD DIAMOND; CVD GROWTHS; DEFECTS INDUCED; ETCH PITS; ETCHING PROCESS; ETCHING TIME; ETCHING TREATMENT; EXTENDED DEFECT; FORMATION MECHANISM; GROWN CRYSTALS; HIGH PRESSURE HIGH TEMPERATURE; HPHT; IN-SITU; LASER MICROSCOPY; LOW COSTS; MIS-ORIENTATION; MONO-CRYSTALS; PLASMA TREATMENT; SUBSTRATE SURFACE; THREADING DISLOCATION;

DEFECT DENSITY; DIAMONDS; DISLOCATIONS (CRYSTALS); ETCHING; MORPHOLOGY; PLASMA ETCHING; POLISHING; SURFACE DEFECTS;

CHEMICAL VAPOR DEPOSITION;

EID: 84866385880     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200069     Document Type: Article

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