Erratum to "Recent advances in high-growth rate single-crystal CVD diamond" [Diamond Relat. Mater. 18 (2009) 698-703] (DOI:10.1016/j.diamond.2008.12.002);Recent advances in high-growth rate single-crystal CVD diamond

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 698-703

  Liang, Qi ^a   Yan, Chih shiue ^a   Meng, Yufei ^a   Lai, Joseph ^a   Krasnicki, Szczesny ^a   Mao, Ho kwang ^a   Hemley, Russell J ^a  

^a GEOPHYSICAL LABORATORY   (United States)

Author keywords

CVD; High growth rate; Homoepitaxial; Plasma; Single crystal diamond

Indexed keywords

BINARY ALLOYS; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRONIC PROPERTIES; FRACTURE TOUGHNESS; GROWTH RATE; PHOTOLUMINESCENCE; PLASMA CVD; PLASMAS; SYNTHETIC DIAMONDS; URANIUM ALLOYS;

DIFFRACTION TECHNIQUES; HIGH GROWTH RATE; HOMOEPITAXIAL; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; PHOTOLUMINESCENCE SPECTRUM; SINGLE CRYSTAL CVD DIAMOND; SINGLE CRYSTAL DIAMOND; SUBSTRATE SURFACE TEMPERATURE;

SINGLE CRYSTALS;

EID: 67349273714     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.07.008     Document Type: Erratum

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