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Volumn 100, Issue 19, 2012, Pages

High fraction of substitutional phosphorus in a (100) diamond epilayer with low surface roughness

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER ELECTRONICS; PHOSPHORUS ATOM; PHOSPHORUS-DOPED DIAMOND;

EID: 84862058417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4712617     Document Type: Article
Times cited : (29)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.