Characterization of boron doped diamond epilayers grown in a NIRIM type reactor

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1330-1334

  Mortet, V ^a,b   Daenen, M ^a   Teraji, T ^c   Lazea, A ^a,b   Vorlicek, V ^d   D'Haen, J ^a,b   Haenen, K ^a,b   D'Olieslaeger, M ^a,b  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

CVD Diamond; Electrical properties; Homoepitaxy; Optical properties; P type doping

Indexed keywords

BORON; BORON COMPOUNDS; CONCENTRATION (PROCESS); DIAMONDS; EPITAXIAL GROWTH; FOURIER TRANSFORMS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; IMAGING TECHNIQUES; MOLECULAR BEAM EPITAXY; NONMETALS; PHOTOCURRENTS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS;

BORON CONCENTRATIONS; BORON DOPED LAYERS; BORON-DOPED DIAMOND; BORON-DOPED DIAMOND LAYERS; CVD DIAMOND; ELECTRICAL PROPERTIES; EPILAYERS GROWN; EXCITED STATES; FOURIER TRANSFORM PHOTOCURRENT SPECTROSCOPY; HOMOEPITAXY; NATURAL DIAMONDS; OPTICAL PROPERTIES; OPTICALLY CHARACTERIZED; P-TYPE DOPING; PHOTO-IONIZATION; SINGLE-CRYSTAL SUBSTRATES;

MAGNETIC FIELD EFFECTS;

EID: 48849088953     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.087     Document Type: Article

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