Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3465-3467

  Kasu, M ^a   Makimoto, T ^a   Ebert, W ^b   Kohn, E ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; MOLECULAR ORIENTATION; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

COVALENT BOND; MICROTWINS;

STACKING FAULTS;

EID: 0242415226     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622105     Document Type: Article

References (11)

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