Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regime

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 9, 2008, Pages 2114-2120

  Brinza, O ^a   Achard, J ^a   Silva, F ^a   Bonnin, X ^a   Barroy, P ^a   De Corte, K ^b   Gicquel, A ^a  

^a UNIVERSITÉ PARIS 13   (France)

^b HRD Antwerp NV   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL CRACKINGS; CRYSTALLOGRAPHIC PLANES; CVD DIAMONDS; DELETERIOUS EFFECTS; FILM PROCESSING; GAS PHASES; GEOMETRIC GROWTHS; GROWTH PARAMETERS; GROWTH PROCESSES; HIGH MICROWAVES; METHANE CONCENTRATIONS; MONOCRYSTALLINE; NITROGEN CONTENTS; PROCESS PARAMETERS; SUBSTRATE ORIENTATIONS; SUBSTRATE TEMPERATURES; THICK DIAMOND FILMS;

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIAMONDS; FILM GROWTH; METHANATION; METHANE; POWER ELECTRONICS; PROBABILITY DENSITY FUNCTION; THICK FILMS; THREE DIMENSIONAL;

DIAMOND FILMS;

EID: 54249144034     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200879716     Document Type: Conference Paper

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