High rate growth and electrical/optical properties of high-quality homoepitaxial diamond (100) films

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 255-260

  Teraji, Tokuyuki ^a   Hamada, Mitsuhiro ^a   Wada, Hideki ^a   Yamamoto, Michinori ^a   Arima, Kazuya ^a   Ito, Toshimichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Diamond film; Excitons; Homoepitaxy; P type doping

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; EXCITONS; MICROWAVES; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HOMOEPITAXY; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD); P-TYPE DOPING; ROOM TEMPERATURE;

DIAMOND FILMS;

EID: 18444416052     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.12.012     Document Type: Conference Paper

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