Hydrogen incorporation control in high quality homoepitaxial diamond (111) growth

Diamond and Related Materials

Volumn 8, Issue 7, 1999, Pages 1291-1295

  Sakaguchi, Isao ^a   Nishitani Gamo, Mikka ^a   Loh, Kian Ping ^a   Haneda, Hajime ^b   Ando, Toshihiro ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Diamond (111) growth; Homoepitaxy; Hydrogen; Microwave assisted plasma chemical vapor deposition (MPCVD)

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TEMPERATURE;

HOMOEPITAXY; MICROWAVE ASSISTED PLASMA CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING DIAMONDS;

EID: 0033165092     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00123-5     Document Type: Article

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