Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1051-1054

  Tokuda, Norio ^a   Umezawa, Hitoshi ^a   Ri, Sung Gi ^a,b   Ogura, Masahiko ^a   Yamabe, Kikuo ^c   Okushi, Hideyo ^a   Yamasaki, Satoshi ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Atomically flat surface; CVD; Diamond; Homoepitaxy; Lateral growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; CONSERVATION; DIAMOND FILMS; DIAMONDS; ECOLOGY; EPITAXIAL GROWTH; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; MICROWAVES; PLASMA DEPOSITION; SCANNING PROBE MICROSCOPY; SOIL CONSERVATION; VAPOR DEPOSITION;

111 SURFACES; ATOMICALLY FLAT SURFACE; ATOMICALLY FLAT SURFACES; BI LAYERS; CVD; DIAMOND; EX-SITU ATOMIC FORCE MICROSCOPY; FLAT TERRACES; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; HOMOEPITAXY; LATERAL GROWTH; MESA STRUCTURES; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 48849113191     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.089     Document Type: Article

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