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Volumn 317, Issue 1, 2011, Pages 32-38

Crystal growth and perfection of large octahedral synthetic diamonds

(7) Khokhryakov, Alexander F a,b Palyanov, Yuri N a,b Kupriyanov, Igor N a Borzdov, Yuri M a Sokol, Alexander G a Härtwig, Jürgen c Masiello, Fabio c

a SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY (Russian Federation)

b NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

c EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

Author keywords

A1. Etching; A1. Line defects; A1. Planar defects; A2. Single crystal growth; B1. Diamond

Indexed keywords

A1. ETCHING; A1. PLANAR DEFECTS; AVERAGE RATE; B1. DIAMOND; DIAMOND CRYSTALS; DISLOCATION-FREE; EXTENDED DEFECT; GROWTH SECTORS; GROWTH STEPS; LINE DEFECTS; MIXED DISLOCATION; PARTIAL DISLOCATIONS; PLANAR DEFECT; SEED CRYSTAL; SELECTIVE ETCHING; TEMPERATURE GRADIENT METHOD; TWO-DIMENSIONAL NUCLEATION; X-RAY DIFFRACTION TOPOGRAPHY;

CRYSTAL GROWTH; CRYSTALLIZATION; DEFECTS; DIAMONDS; ETCHING; GRADIENT METHODS; SCREW DISLOCATIONS; SINGLE CRYSTALS; STACKING FAULTS; SYNTHETIC DIAMONDS; X RAY DIFFRACTION;

EDGE DISLOCATIONS;

EID: 79952038228 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.01.011 Document Type: Article

Times cited : (29)

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