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Volumn 730, Issue , 2013, Pages 84-90
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Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV
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Author keywords
DLTS measurement; Electron irradiation; Radiation damage; Silicon detector; TSC measurement
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Indexed keywords
BETWEEN CLUSTERS;
CHARGED HADRONS;
DEFECT FORMATION;
DEFECT KINETICS;
DLTS MEASUREMENTS;
ELECTRON ENERGIES;
ISOCHRONAL ANNEALING;
N TYPE SILICON;
DIODES;
DISSOCIATION;
ELECTRON ENERGY LEVELS;
ELECTRON IRRADIATION;
ISOTHERMAL ANNEALING;
POINT DEFECTS;
RADIATION DAMAGE;
SILICON;
SILICON DETECTORS;
DEFECTS;
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EID: 84888375536
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2013.04.080 Document Type: Article |
Times cited : (27)
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References (42)
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