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Volumn 404, Issue 23-24, 2009, Pages 4565-4567
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Trivacancy in silicon: A combined DLTS and ab-initio modeling study
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Author keywords
Ab initio modeling; DLTS; Energy levels; Silicon; Trivacancy
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Indexed keywords
AB INITIO;
ACCEPTOR LEVELS;
BISTABLES;
DLTS;
ENERGY LEVEL;
ENERGY LEVELS;
MODELING STUDIES;
NEUTRAL-CHARGE;
PLANAR CONFIGURATIONS;
TRIGONAL SYMMETRY;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
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EID: 74349085204
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2009.08.142 Document Type: Article |
Times cited : (9)
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References (23)
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