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Volumn 404, Issue 23-24, 2009, Pages 4565-4567

Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Author keywords

Ab initio modeling; DLTS; Energy levels; Silicon; Trivacancy

Indexed keywords

AB INITIO; ACCEPTOR LEVELS; BISTABLES; DLTS; ENERGY LEVEL; ENERGY LEVELS; MODELING STUDIES; NEUTRAL-CHARGE; PLANAR CONFIGURATIONS; TRIGONAL SYMMETRY;

EID: 74349085204     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.142     Document Type: Article
Times cited : (9)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.