Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2169-2171

  Pintilie, I ^a   Fretwurst, E ^b   Lindstrom G ^b   Stahl, J ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; GAMMA RAYS; POINT DEFECTS; SEMICONDUCTOR DIODES; SPECTRUM ANALYSIS;

FLOAT ZONE MATERIALS;

SEMICONDUCTING SILICON;

EID: 0037474981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564869     Document Type: Article

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