Thermally stimulated current method applied to highly irradiated silicon diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 652-657

  Pintilie, I ^a   Tivarus, C ^a   Pintilie, L ^a   Moll, M ^b   Fretwurst, E ^b   Lindstroem, G ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Silicon detectors; Thermally stimulated currents

Indexed keywords

ELECTRIC CURRENTS; HOLE TRAPS; NEUTRON IRRADIATION; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; THERMAL EFFECTS;

SILICON DETECTORS; THERMALLY STIMULATED CURRENTS (TSC);

SEMICONDUCTOR DIODES;

EID: 0037059368     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01654-0     Document Type: Conference Paper

References (21)